n n p p n n BSX62-bsx63 comset semiconductors 1/3 s s w w i i t t c c h h i i n n g g t t r r a a n n s s i i s s t t o o r r s s the BSX62 and bsx63 are npn switching transistors mounted in to-39 metal package. they are intended for use in medium power switching. high current and low voltage. compliance to rohs. absolute maximum ratings symbol ratings value unit BSX62 bsx63 v ceo collector-emitter voltage i b =0 40 60 v v cbo collector-base voltage i e =0 60 80 v v ebo emitter-base voltage i c =0 5 v i c collector current 3 a i cm collector peak current 3 a i bm base peak current 500 ma p d total power dissipation t amb = 25 5 w t j junction temperature 200 c t amb operating ambient temperature -65 to +150 t st g storage temperature range -65 to +150 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient 200 c/w r thj-c thermal resistance, junction to case 28 c/w switching times symbol ratings value unit t on turn-on time i con = 1 a; i bon = 50 ma i bof f = -50 ma 300 ns t of f turn-off time 1.5 s b c e
n n p p n n BSX62-bsx63 26/09/2012 comset semiconductors 2/3 electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = 40 v, i e =0 BSX62 - - 100 na v cb = 60 v, i e =0 bsx63 v cb = 40 v, i e = 0 t j = 150c BSX62 - - 100 a v cb = 60 v, i e =0 t j = 150c bsx63 i ebo emitter cutoff current v be = 5.0 v, i c =0 - - 100 na v ce(sat) collector-emitter saturation voltage i c = 1 a, i b = 100 ma - - 0.7 v i c = 2 a, i b = 200 ma - - 0.8 v be(sat) base-emitter saturation voltage i c = 1 a, i b = 100 ma - - 1.2 v i c = 2 a, i b = 200 ma - - 1.3 v be base-emitter voltage i c = 100 ma, v ce = 1 v - - 1 v i c = 1 a, v ce = 1 v 1 - 1.2 i c = 2 a, v ce = 5 v - - 1.3 h fe dc current gain i c = 100 m v ce = 1 v BSX62/10 - 110 - - bsx63/10 BSX62/16 - 180 - bsx63/16 i c = 1 a v ce = 1 v BSX62/10 63 100 160 bsx63/10 BSX62/16 100 160 250 bsx63/16 i c = 2 a v ce = 1 v BSX62/10 - 70 - bsx63/10 BSX62/16 - 120 - bsx63/16 f t transition frequency i c = 200 ma, v ce = 10 v f = 100mhz 30 70 - mhz c c collector capacitance i e = i e =0, v cb = 10 v f = 1mhz - - 70 pf
n n p p n n BSX62-bsx63 26/09/2012 comset semiconductors 3/3 mechanical data case to-39 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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